GENERAL DESCRIPTION
The 16Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 16,777,216 bits. It is internally configured as a dual 512K x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the 512K x 16-bit banks is organized as 2,048 rows by 256 columns by 16 bits.

FEATURES
• PC100 functionality
• Fully synchronous; all signals registered on
    positive edge of system clock
• Internal pipelined operation; column address can
    be changed every clock cycle
• Internal banks for hiding row access/precharge
    1 Meg x 16 - 512K x 16 x 2 banks architecture with
    11 row, 8 column addresses per bank
• Programmable burst lengths: 1, 2, 4, 8 or full page
• Auto Precharge Mode, includes CONCURRENT
    AUTO PRECHARGE
• Self Refresh and Adaptable Auto Refresh Modes
    - 32ms, 2,048-cycle refresh or
    - 64ms, 2,048-cycle refresh or
    - 64ms, 4,096-cycle refresh
• LVTTL-compatible inputs and outputs
• Single +3.3V ±0.3V power supply
• Supports CAS latency of 1, 2 and 3
• Industrial temperature range: -40°C to +85°C