3N50KG-TND-R Datasheet(PDF) - Unisonic Technologies

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3N50KG-TND-R Datasheet (PDF) - Unisonic Technologies

3N50KG-TND-R Datasheet PDF - Unisonic Technologies


Part #	3N50KG-TND-R

Download	3N50KG-TND-R Download

File Size	297.51 Kbytes

Page	7 Pages

Manufacturer	UTC [Unisonic Technologies]

Direct Link	http://www.utc-ic.com

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Description

N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

3N50KG-TND-R Datasheet (PDF)

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3N50KG-TND-R Datasheet PDF - Unisonic Technologies


Part #	3N50KG-TND-R

Download	3N50KG-TND-R Click to download

File Size	297.51 Kbytes

Page	7 Pages

Manufacturer	UTC [Unisonic Technologies]

Direct Link	http://www.utc-ic.com

Logo

Description	N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

3N50KG-TND-R Datasheet (HTML) - Unisonic Technologies

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3N50KG-TND-R Datasheet HTML 6Page - Unisonic Technologies

3N50KG-TND-R Datasheet HTML 7Page - Unisonic Technologies

3N50KG-TND-R Product details

DESCRIPTION
The UTC 3N50K-MK is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode.
The UTC 3N50K-MK is generally applied in high efficiency switch mode power supplies, active power factor correction and electronic lamp ballasts based on half bridge topology.

FEATURES
* RDS(ON) < 3.2Ω @ VGS = 10V, ID = 1.5A
* High Switching Speed
* 100% Avalanche Tested

Similar Part No. - 3N50KG-TND-R

Manufacturer	Part #	Datasheet	Description
Unisonic Technologies	3N50	173Kb / 6P	3 Amps, 500 Volts N-CHANNEL POWER MOSFET
Unisonic Technologies	3N50	181Kb / 6P	3A, 500V N-CHANNEL POWER MOSFET
Inchange Semiconductor ...	3N50	49Kb / 2P	Fast Switching
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Similar Description - 3N50KG-TND-R

Manufacturer	Part #	Datasheet	Description
Microsemi Corporation	PPNGZ52F120A	102Kb / 3P	N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
Advanced Power Electron...	AP25G45GEM	69Kb / 3P	N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
Silicon Standard Corp.	SSM20G45EGH	763Kb / 7P	N-channel Insulated-Gate Bipolar Transistor
Silicon Standard Corp.	SSM28G45EM	263Kb / 4P	N-CHANNEL INSULATED-GATE BIPOLAR TRANSISTOR
Unisonic Technologies	UG25N45	184Kb / 3P	N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
Advanced Power Electron...	AP20GT60P-HF	65Kb / 3P	N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
	AP30G40GEO-HF	60Kb / 3P	N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
	AP40G120W	99Kb / 3P	N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
Unisonic Technologies	1N50A	194Kb / 5P	N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
Unisonic Technologies	30N06V-Q	205Kb / 6P	N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

About Unisonic Technologies

Unisonic Technologies is a Taiwanese semiconductor company that specializes in the design, manufacture, and sales of power management and analog integrated circuits (ICs). The company was founded in 1980 and has a global presence, with offices and facilities in Asia, Europe, and the Americas.

Unisonic Technologies provides a wide range of products and solutions, including power management ICs, linear voltage regulators, and motor control ICs. The company's products are used in a variety of applications, including consumer electronics, automotive, industrial, and telecommunications. Unisonic Technologies is known for its expertise in power management technology and its ability to provide high-performance and cost-effective solutions to its customers.

In recent years, Unisonic Technologies has expanded its product portfolio and offerings to include solutions for the Internet of Things (IoT) and smart energy markets. The company is committed to innovation and research and development and is actively involved in the development of new technologies and solutions for the semiconductor industry. Unisonic Technologies is a recognized leader in the power management and analog ICs market and continues to provide high-quality products and services to its customers.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.

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