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MBRF10100CT Datasheet (PDF) - Vishay Siliconix

MBRF10100CT Datasheet PDF - Vishay Siliconix
Part # MBRF10100CT
Download  MBRF10100CT Download
File Size   90.77 Kbytes
Page   5 Pages
Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix
Description Dual High Voltage Trench MOS Barrier Schottky Rectifier

MBRF10100CT Datasheet (PDF)

Go To PDF Page Download Datasheet
MBRF10100CT Datasheet PDF - Vishay Siliconix

Part # MBRF10100CT
Download  MBRF10100CT Click to download

File Size   90.77 Kbytes
Page   5 Pages
Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix
Description Dual High Voltage Trench MOS Barrier Schottky Rectifier

MBRF10100CT Datasheet (HTML) - Vishay Siliconix


MBRF10100CT Product details

• Trench MOS Schottky technology
• Lower power losses, high efficiency
• Low forward voltage drop
• High forward surge capability
• High frequency operation
• Solder dip 275 °C max. 10 s, per JESD 22-B106




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About Vishay Siliconix


Vishay Siliconix is a subsidiary of Vishay Intertechnology, a global manufacturer of passive electronic components.
Vishay Siliconix specializes in the design, manufacturing, and marketing of power MOSFETs, IGBTs, and other power semiconductors.
The company was founded in 1962 and is headquartered in Santa Clara, California.
Vishay Siliconix provides power solutions for a variety of applications, including renewable energy systems, industrial equipment, computing and telecommunications, and automotive electronics.
The company's products are designed for high efficiency, low power consumption, and high reliability, and are manufactured in state-of-the-art facilities using advanced fabrication processes.
With a focus on innovation and customer satisfaction, Vishay Siliconix is committed to providing its customers with the best power management solutions to meet their needs.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.




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