IRG4PC40K Datasheet(PDF) - International Rectifier

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IRG4PC40K Datasheet (PDF) - International Rectifier

IRG4PC40K Datasheet PDF - International Rectifier


Part #	IRG4PC40K

Download	IRG4PC40K Download

File Size	119.37 Kbytes

Page	8 Pages

Manufacturer	IRF [International Rectifier]

Direct Link	http://www.irf.com

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Description

INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.1V, @Vge=15V, Ic=25A)

IRG4PC40K Datasheet (PDF)

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IRG4PC40K Datasheet PDF - International Rectifier


Part #	IRG4PC40K

Download	IRG4PC40K Click to download

File Size	119.37 Kbytes

Page	8 Pages

Manufacturer	IRF [International Rectifier]

Direct Link	http://www.irf.com

Logo

Description	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.1V, @Vge=15V, Ic=25A)

IRG4PC40K Datasheet (HTML) - International Rectifier

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IRG4PC40K Datasheet HTML 8Page - International Rectifier

IRG4PC40K Product details

Short Circuit Rated UltraFast IGBT

Features
• Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V
• Generation 4 IGBT design provides higher efficiency than Generation 3
• Industry standard TO-247AC package

Benefits
• Generation 4 IGBTs offer highest efficiency available
• IGBTs optimized for specified application conditions

Similar Part No. - IRG4PC40K

Manufacturer	Part #	Datasheet	Description
International Rectifier	IRG4PC40K	98Kb / 35P	Fit Rate / Equivalent Device Hours
	IRG4PC40KD	182Kb / 10P	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.1V, @Vge=15V, Ic=25A)
	IRG4PC40KD	98Kb / 35P	Fit Rate / Equivalent Device Hours
	IRG4PC40KDPBF	325Kb / 11P	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
	IRG4PC40KDPBF	326Kb / 11P	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Similar Description - IRG4PC40K

Manufacturer	Part #	Datasheet	Description
International Rectifier	IRG4BC20U	167Kb / 8P	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.85V, @Vge=15V, Ic=6.5A)
	IRG4BC30K	137Kb / 8P	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A)
	IRG4BC30U	167Kb / 8P	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.95V, @Vge=15V, Ic=12A)
	IRG4BC40K	156Kb / 8P	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.1V, @Vge=15V, Ic=25A)
	IRG4BC40U	169Kb / 8P	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.72V, @Vge=15V, Ic=20A)
	IRG4PC30F	145Kb / 8P	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A)
	IRG4PC40KD	182Kb / 10P	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.1V, @Vge=15V, Ic=25A)
	IRG4PC40U	148Kb / 8P	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.1.72V, @Vge=15V, Ic=20A)
	IRG4PC40W	116Kb / 8P	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.05V, @Vge=15V, Ic=20A)
	IRG4PC50F	146Kb / 8P	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.45V, @Vge=15V, Ic=39A)

About International Rectifier

International Rectifier (IR) was an American company that specialized in the design and manufacture of power management and power control semiconductors.
The company was founded in 1947 and was headquartered in El Segundo, California.
IR provided a wide range of products including power management ICs, power MOSFETs, IGBTs, and other power control products.
The company's products were used in various applications such as computing, telecommunications, and industrial automation.
IR was known for its expertise in power management and control technology and its ability to deliver high-quality and reliable products to its customers.
In 2014, IR was acquired by Infineon Technologies, a leading provider of power management and control products and other semiconductor solutions.
The International Rectifier brand is no longer in use, but its technology and products continue to be a part of Infineon's portfolio.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.

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