IRFIBF30G Datasheet(PDF) - International Rectifier

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IRFIBF30G Datasheet (PDF) - International Rectifier

IRFIBF30G Datasheet PDF - International Rectifier


Part #	IRFIBF30G

Download	IRFIBF30G Download

File Size	167.58 Kbytes

Page	6 Pages

Manufacturer	IRF [International Rectifier]

Direct Link	http://www.irf.com

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Description

Power MOSFET(Vdss=900V, Rds(on)=3.7ohm, Id=1.9A)

IRFIBF30G Datasheet (PDF)

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IRFIBF30G Datasheet PDF - International Rectifier


Part #	IRFIBF30G

Download	IRFIBF30G Click to download

File Size	167.58 Kbytes

Page	6 Pages

Manufacturer	IRF [International Rectifier]

Direct Link	http://www.irf.com

Logo

Description	Power MOSFET(Vdss=900V, Rds(on)=3.7ohm, Id=1.9A)

IRFIBF30G Datasheet (HTML) - International Rectifier

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IRFIBF30G Datasheet HTML 6Page - International Rectifier

IRFIBF30G Product details

Description
Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

• Isolated Package
• High Voltage Isolation = 2.5 KVRMS
• Sink to Lead Creepage Dis. = 4.8 mm
• Dynamic dV/dt Rating
• Low Thermal Resistance
• Lead-Free

Similar Part No. - IRFIBF30G

Manufacturer	Part #	Datasheet	Description
Vishay Siliconix	IRFIBF30G	1Mb / 8P	Power MOSFET 16-Jun-08
International Rectifier	IRFIBF30GPBF	920Kb / 8P	HEXFET Power MOSFET
Vishay Siliconix	IRFIBF30GPBF	1Mb / 8P	Power MOSFET 16-Jun-08

Similar Description - IRFIBF30G

Manufacturer	Part #	Datasheet	Description
International Rectifier	IRFBF20	168Kb / 6P	Power MOSFET(Vdss=900V, Rds(on)=8.0ohm, Id=1.7A)
	IRFBF20S	311Kb / 10P	Power MOSFET(Vdss=900V, Rds(on)=8.0ohm, Id=1.7A)
	IRFBF30	166Kb / 6P	Power MOSFET(Vdss=900V, Rds(on)=3.7ohm, Id=3.6A)
	IRFIBF20G	168Kb / 6P	Power MOSFET(Vdss=900V, Rds(on)=8.0ohm, Id=1.2A)
	IRFL014N	144Kb / 8P	Power MOSFET(Vdss=55V, Rds(on)=0.16ohm, Id=1.9A)
	IRFPF30	165Kb / 6P	Power MOSFET(Vdss=900V, Rds(on)=3.7ohm, Id=3.6A)
	IRFPF40	170Kb / 6P	Power MOSFET(Vdss=900V, Rds(on)=2.5ohm, Id=4.7A)
	IRFPF50	167Kb / 6P	Power MOSFET(Vdss=900V, Rds(on)=1.6ohm, Id=6.7A)
	IRFR9210	172Kb / 6P	Power MOSFET(Vdss=-200V, Rds(on)=3.0ohm, Id=-1.9A)
	IRFR9210PBF	1Mb / 10P	HEXFET POWER MOSFET ( VDSS = -200V , RDS(on) = 3.0廓 , ID = -1.9A )

About International Rectifier

International Rectifier (IR) was an American company that specialized in the design and manufacture of power management and power control semiconductors.
The company was founded in 1947 and was headquartered in El Segundo, California.
IR provided a wide range of products including power management ICs, power MOSFETs, IGBTs, and other power control products.
The company's products were used in various applications such as computing, telecommunications, and industrial automation.
IR was known for its expertise in power management and control technology and its ability to deliver high-quality and reliable products to its customers.
In 2014, IR was acquired by Infineon Technologies, a leading provider of power management and control products and other semiconductor solutions.
The International Rectifier brand is no longer in use, but its technology and products continue to be a part of Infineon's portfolio.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.

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