G20N120 Datasheet(PDF)

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G20N120 Datasheet (PDF) - Intersil Corporation


Part #	G20N120

Download	G20N120 Download

File Size	167.55 Kbytes

Page	5 Pages

Manufacturer	INTERSIL [Intersil Corporation]

Direct Link	http://www.intersil.com/cda/home

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Description

34A, 1200V N-Channel IGBT

G20N120 Datasheet (PDF)

Download Datasheet


Part #	G20N120

Download	G20N120 Click to download

File Size	167.55 Kbytes

Page	5 Pages

Manufacturer	INTERSIL [Intersil Corporation]

Direct Link	http://www.intersil.com/cda/home

Logo

Description	34A, 1200V N-Channel IGBT

G20N120 Datasheet (HTML) - Intersil Corporation

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G20N120 Product details

Description

The HGTG20N120E2 is a MOS gated, high voltage switch ing device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between +25^oC and +150^oC.

Features

34A, 1200V

Latch Free Operation

Typical Fall Time - 780ns

High Input Impedance

Low Conduction Loss

Similar Part No. - G20N120

Manufacturer	Part #	Datasheet	Description
Intersil Corporation	G20N120	97Kb / 8P	45A, 1200V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode October 1998
	G20N120	83Kb / 7P	63A, 1200V, NPT Series N-Channel IGBT January 2000
	G20N120	93Kb / 7P	63A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode January 2000
Fairchild Semiconductor	G20N120	121Kb / 8P	63A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

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Similar Description - G20N120

Manufacturer	Part #	Datasheet	Description
Fairchild Semiconductor	HGTD1N120BNS	97Kb / 8P	5.3A, 1200V, NPT Series N-Channel IGBT
Fairchild Semiconductor	HGTD2N120CNS	498Kb / 9P	13A, 1200V, NPT Series N-Channel IGBT
Intersil Corporation	HGTD1N120CNS	77Kb / 7P	6.2A, 1200V, NPT Series N-Channel IGBT January 2000
	HGTG30N120CN	81Kb / 7P	75A, 1200V, NPT Series N-Channel IGBT January 2000
	HGTG30N120D2	40Kb / 5P	30A, 1200V N-Channel IGBT April 1995
	HGTG34N100E2	38Kb / 5P	34A, 1000V N-Channel IGBT April 1995
	HGTP2N120BN	85Kb / 7P	12A, 1200V, NPT Series N-Channel IGBT January 2000
Fairchild Semiconductor	HGTG27N120BN	178Kb / 8P	72A, 1200V, NPT Series N-Channel IGBT
Fairchild Semiconductor	HGT1S10N120BNST	201Kb / 8P	35A, 1200V, NPT Series N-Channel IGBT
Unisonic Technologies	UG1N120	290Kb / 3P	1200V NPT SERIES N-CHANNEL IGBT

More results

About Intersil Corporation

Intersil Corporation was an American semiconductor company that specialized in the design and manufacture of high-performance analog and mixed-signal integrated circuits.
The company was founded in 1967 and was known for its expertise in power management, data conversion, and radio frequency (RF) technologies.
Intersil's products were used in a wide range of applications such as consumer electronics, industrial, telecommunications, and aerospace and defense.
In 2016, Intersil was acquired by Renesas Electronics Corporation, a Japanese semiconductor company.
The Intersil brand and technology continue to be developed and sold as part of Renesas' portfolio of products.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.

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