10N120BN Datasheet(PDF)

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10N120BN Datasheet (PDF) - Intersil Corporation


Part #	10N120BN

Download	10N120BN Download

File Size	81.67 Kbytes

Page	7 Pages

Manufacturer	INTERSIL [Intersil Corporation]

Direct Link	http://www.intersil.com/cda/home

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Description

35A, 1200V, NPT Series N-Channel IGBT

10N120BN Datasheet (PDF)

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Part #	10N120BN

Download	10N120BN Click to download

File Size	81.67 Kbytes

Page	7 Pages

Manufacturer	INTERSIL [Intersil Corporation]

Direct Link	http://www.intersil.com/cda/home

Logo

Description	35A, 1200V, NPT Series N-Channel IGBT

10N120BN Datasheet (HTML) - Intersil Corporation

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10N120BN Product details

The HGTG10N120BN, HGTP10N120BN and HGT1S10N120BNS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low onstate conduction loss of a bipolar transistor.

Features
• 35A, 1200V, TC = 25oC
• 1200V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . 140ns at TJ = 150oC
• Short Circuit Rating
• Low Conduction Loss
• Avalanche Rated
• Thermal Impedance SPICE Model
   Temperature Compensating SABER™ Model
   www.intersil.com
• Related Literature
   - TB334 “Guidelines for Soldering Surface Mount
      Components to PC Boards

Similar Part No. - 10N120BN

Manufacturer	Part #	Datasheet	Description
Fairchild Semiconductor	10N120BN	217Kb / 8P	35A, 1200V, NPT Series N-Channel IGBT
Fairchild Semiconductor	10N120BND	110Kb / 8P	35A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
Intersil Corporation	10N120BND	82Kb / 7P	35A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode January 2000

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Similar Description - 10N120BN

Manufacturer	Part #	Datasheet	Description
Fairchild Semiconductor	HGTG10N120BN	217Kb / 8P	35A, 1200V, NPT Series N-Channel IGBT
Fairchild Semiconductor	HGTG10N120BND	110Kb / 8P	35A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
Intersil Corporation	HGTD1N120BNS	71Kb / 7P	5.3A, 1200V, NPT Series N-Channel IGBT January 2000
	HGTD2N120CNS	89Kb / 7P	13A, 1200V, NPT Series N-Channel IGBT January 2000
	HGTG10N120BND	82Kb / 7P	35A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode January 2000
	HGTG27N120BN	82Kb / 7P	72A, 1200V, NPT Series N-Channel IGBT January 2000
Fairchild Semiconductor	HGTG30N120CN	113Kb / 8P	75A, 1200V, NPT Series N-Channel IGBT
	HGT1S10N120BNST	201Kb / 8P	35A, 1200V, NPT Series N-Channel IGBT
	HGTD1N120BNS9A	96Kb / 8P	5.3A, 1200V, NPT Series N-Channel IGBT
Unisonic Technologies	UG1N120	290Kb / 3P	1200V NPT SERIES N-CHANNEL IGBT

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About Intersil Corporation

Intersil Corporation was an American semiconductor company that specialized in the design and manufacture of high-performance analog and mixed-signal integrated circuits.
The company was founded in 1967 and was known for its expertise in power management, data conversion, and radio frequency (RF) technologies.
Intersil's products were used in a wide range of applications such as consumer electronics, industrial, telecommunications, and aerospace and defense.
In 2016, Intersil was acquired by Renesas Electronics Corporation, a Japanese semiconductor company.
The Intersil brand and technology continue to be developed and sold as part of Renesas' portfolio of products.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.

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