GP250MHB06S Datasheet(PDF)

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GP250MHB06S Datasheet (PDF) - Dynex Semiconductor


Part #	GP250MHB06S

Download	GP250MHB06S Download

File Size	127.82 Kbytes

Page	10 Pages

Manufacturer	DYNEX [Dynex Semiconductor]

Direct Link	http://www.dynexsemi.com

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Description

Half Bridge IGBT Module

GP250MHB06S Datasheet (PDF)

Download Datasheet


Part #	GP250MHB06S

Download	GP250MHB06S Click to download

File Size	127.82 Kbytes

Page	10 Pages

Manufacturer	DYNEX [Dynex Semiconductor]

Direct Link	http://www.dynexsemi.com

Logo

Description	Half Bridge IGBT Module

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GP250MHB06S Product details

The Powerline range of modules includes half bridge, chopper, dual and single switch configurations covering voltages from 600V to 3300V and currents up to 2400A.
The GP250MHB06S is a half bridge 600V n channel enhancement mode insulated gate bipolar transistor (IGBT) module. The module is suitable for a variety of medium voltage applications in motor drives and power conversion.

FEATURES
■ n - Channel
■ High Switching Speed
■ Low Forward Voltage Drop
■ Isolated Base

APPLICATIONS
■ PWM Motor Control
■ UPS

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Similar Description - GP250MHB06S

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About Dynex Semiconductor

Dynex Semiconductor was a British company that specialized in the design and manufacture of high-power semiconductors.
The company was founded in 1967 and was headquartered in Lincoln, England.
Dynex was known for its expertise in high-power semiconductor technology and its ability to deliver custom-designed power devices for various applications such as power conversion, motor control, and renewable energy systems.
In 2015, Dynex was acquired by Infineon Technologies, a leading provider of power and sensor systems.
The Dynex brand is no longer in use, but its technology and products continue to be a part of Infineon's portfolio.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.

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