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STD8NM60ND Datasheet (PDF) - STMicroelectronics
STD8NM60ND Datasheet PDF - STMicroelectronics
Part # STD8NM60ND
Download  STD8NM60ND Download
File Size   727.53 Kbytes
Page   17 Pages
Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics
Description N-channel 600 V, 0.59 , 7 A, FDmesh II Power MOSFET

STD8NM60ND Datasheet (PDF)

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STD8NM60ND Datasheet PDF - STMicroelectronics

Part # STD8NM60ND
Download  STD8NM60ND Click to download

File Size   727.53 Kbytes
Page   17 Pages
Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics
Description N-channel 600 V, 0.59 , 7 A, FDmesh II Power MOSFET

STD8NM60ND Datasheet (HTML) - STMicroelectronics


STD8NM60ND Product details

Description
The FDmesh™ II series belongs to the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout and associates all advantages of reduced onresistance and fast switching with an intrinsic fastrecovery body diode.Strongly recommended for bridge topologies, in ZVS phase-shift converters.

Features

■ The worldwide best RDS(on)* area amongst the fast recovery diode devices
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
■ Extremely high dv/dt and avalanche capabilities

Application
■ Switching applications




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About STMicroelectronics

STMicroelectronics is a multinational electronics and semiconductor manufacturer based in Geneva, Switzerland.

The company offers a wide range of products including microcontrollers, sensors, power amplifiers, and integrated circuits for various applications in the automotive, industrial, and consumer markets.

Founded in 1987, STMicroelectronics has operations in over 100 countries and is one of the largest semiconductor companies in the world.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.




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