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STP5N52K3 Datasheet (PDF) - STMicroelectronics

STP5N52K3 Datasheet PDF - STMicroelectronics
Part # STP5N52K3
Download  STP5N52K3 Download
File Size   1181.85 Kbytes
Page   23 Pages
Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics
Description N-channel 525 V, 1.2 ohm, 4.4 A SuperMESH3 Power MOSFET

STP5N52K3 Datasheet (PDF)

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STP5N52K3 Datasheet PDF - STMicroelectronics

Part # STP5N52K3
Download  STP5N52K3 Click to download

File Size   1181.85 Kbytes
Page   23 Pages
Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics
Description N-channel 525 V, 1.2 ohm, 4.4 A SuperMESH3 Power MOSFET

STP5N52K3 Datasheet (HTML) - STMicroelectronics


STP5N52K3 Product details

Description
These devices are made using the SuperMESH3™ Power MOSFET technology that is obtained via improvements applied to STMicroelectronics’ SuperMESH™ technology combined with a new optimized vertical structure. The resulting product has an extremely low on resistance, superior dynamic performance and high avalanche capability, making it especially suitable for the most demanding applications.

Features

■ 100% avalanche tested
■ Extremely high dv/dt capability
■ Gate charge minimized
■ Very low intrinsic capacitance
■ Improved diode reverse recovery characteristics
■ Zener-protected

Application
   Switching applications




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About STMicroelectronics


STMicroelectronics is a multinational electronics and semiconductor manufacturer based in Geneva, Switzerland.

The company offers a wide range of products including microcontrollers, sensors, power amplifiers, and integrated circuits for various applications in the automotive, industrial, and consumer markets.

Founded in 1987, STMicroelectronics has operations in over 100 countries and is one of the largest semiconductor companies in the world.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.




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