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IXKH30N60C5 Datasheet (PDF) - IXYS Corporation
IXKH30N60C5 Datasheet PDF - IXYS Corporation
Part # IXKH30N60C5
Download  IXKH30N60C5 Download
File Size   112.55 Kbytes
Page   4 Pages
Manufacturer  IXYS [IXYS Corporation]
Direct Link  http://www.ixys.com
Logo IXYS - IXYS Corporation
Description CoolMOS Power MOSFET N-Channel Enhancement Mode Low Rdson, High Vdss MOSFET

IXKH30N60C5 Datasheet (PDF)

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IXKH30N60C5 Datasheet PDF - IXYS Corporation

Part # IXKH30N60C5
Download  IXKH30N60C5 Click to download

File Size   112.55 Kbytes
Page   4 Pages
Manufacturer  IXYS [IXYS Corporation]
Direct Link  http://www.ixys.com
Logo IXYS - IXYS Corporation
Description CoolMOS Power MOSFET N-Channel Enhancement Mode Low Rdson, High Vdss MOSFET

IXKH30N60C5 Datasheet (HTML) - IXYS Corporation




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About IXYS Corporation

IXYS Corporation is a technology company that specializes in the design, manufacture, and sale of power semiconductors and integrated circuits (ICs). The company was founded in 1983 and is headquartered in Milpitas, California. IXYS has a global presence, with operations and customers in over 60 countries around the world.

IXYS provides a wide range of products and solutions, including power MOSFETs, power bipolar transistors, thyristors, diodes, and ICs for power management and control applications. The company's products are used in a variety of applications, including renewable energy, industrial, automotive, and consumer electronics.

IXYS is known for its expertise in power semiconductor technology and its ability to provide high-performance and cost-effective solutions to its customers. The company is committed to innovation and research and development and is actively involved in the development of new technologies and solutions for the power semiconductor market. IXYS is a recognized leader in the power semiconductor market and continues to provide high-quality products and services to its customers.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.




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