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121 Datasheet (PDF) - Honeywell Solid State Electronics Center

121 Datasheet PDF - Honeywell Solid State Electronics Center
Part # 121
Download  121 Download
File Size   736.09 Kbytes
Page   11 Pages
Manufacturer  HONEYWELL [Honeywell Solid State Electronics Center]
Direct Link  http://honeywell.com/Pages/Home.aspx
Logo HONEYWELL - Honeywell Solid State Electronics Center
Description Temperature Sensors Line Guide

121 Datasheet (PDF)

Go To PDF Page Download Datasheet
121 Datasheet PDF - Honeywell Solid State Electronics Center

Part # 121
Download  121 Click to download

File Size   736.09 Kbytes
Page   11 Pages
Manufacturer  HONEYWELL [Honeywell Solid State Electronics Center]
Direct Link  http://honeywell.com/Pages/Home.aspx
Logo HONEYWELL - Honeywell Solid State Electronics Center
Description Temperature Sensors Line Guide

121 Datasheet (HTML) - Honeywell Solid State Electronics Center




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About Honeywell Solid State Electronics Center


Honeywell Solid State Electronics Center (SSEC) was a research and development facility of Honeywell Inc. that operated from 1957 to 1993 in Minneapolis, Minnesota, United States. The center was dedicated to the research, development, and production of solid-state electronics, including microelectronics, semiconductors, and related technologies.

During its operation, SSEC made significant contributions to the advancement of the semiconductor industry, particularly in the areas of integrated circuits, transistor design, and fabrication processes. Notable accomplishments of SSEC include the development of the first silicon transistor, the first commercial silicon planar transistor, and the first integrated circuit to use metal oxide semiconductor (MOS) technology.

In 1993, Honeywell closed the SSEC facility as part of a broader restructuring of its operations. The company's semiconductor business was subsequently sold to SGS-Thomson (now STMicroelectronics) in 1999.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.




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