IRF7663PBF Datasheet(PDF) - International Rectifier

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IRF7663PBF Datasheet (PDF) - International Rectifier

IRF7663PBF Datasheet PDF - International Rectifier


Part #	IRF7663PBF

Download	IRF7663PBF Download

File Size	151.35 Kbytes

Page	7 Pages

Manufacturer	IRF [International Rectifier]

Direct Link	http://www.irf.com

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Description

Trench Technology, Ultra Low On-Resistance, P-Channel MOSFET

IRF7663PBF Datasheet (PDF)

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IRF7663PBF Datasheet PDF - International Rectifier


Part #	IRF7663PBF

Download	IRF7663PBF Click to download

File Size	151.35 Kbytes

Page	7 Pages

Manufacturer	IRF [International Rectifier]

Direct Link	http://www.irf.com

Logo

Description	Trench Technology, Ultra Low On-Resistance, P-Channel MOSFET

IRF7663PBF Datasheet (HTML) - International Rectifier

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IRF7663PBF Datasheet HTML 7Page - International Rectifier

IRF7663PBF Product details

Description
New trench HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The new Micro8® package has half the footprint area of the standard SO-8. This makes the Micro8 an ideal package for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the Micro8 will allow it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards.

● Trench Technology
● Ultra Low On-Resistance
● P-Channel MOSFET
● Very Small SOIC Package
● Low Profile (<1.1mm)
● Available in Tape & Reel
● Lead-Free

Similar Part No. - IRF7663PBF

Manufacturer	Part #	Datasheet	Description
International Rectifier	IRF7663	77Kb / 7P	Power MOSFET(Vdss=-20V, Rds(on)=0.020ohm)
International Rectifier	IRF7663TR	82Kb / 7P	Trench Technology

Similar Description - IRF7663PBF

Manufacturer	Part #	Datasheet	Description
International Rectifier	IRF7750GPBF	231Kb / 8P	HEXFET짰 Power MOSFET Ultra Low On-Resistance Dual P-Channel MOSFET
	IRF5800	114Kb / 8P	Ultra Low On-Resistance, P-Channel MOSFET
	IRLML2803GPBF	230Kb / 8P	Generation V Technology, Ultra Low On-Resistance, N-Channel MOSFET
	IRLML6302PBF	285Kb / 8P	technology, Ultra Low On-Resistance, P-Channel MOSFET
	IRLML6401PBF	196Kb / 8P	Ultra Low On-Resistance, P-Channel MOSFET, SOT-23 Footprint
	IRF7328PBF	175Kb / 8P	Trench Technology Ultra Low On-Resistance
Kersemi Electronic Co.,...	IRF3710Z	4Mb / 12P	Advanced Process Technology Ultra Low On-Resistance
Leshan Radio Company	LDP4098T1G	335Kb / 5P	Dual P-Channel MOSFET Low RDS(on) trench technology.
	LDP4953T1G	331Kb / 5P	Dual P-Channel MOSFET Low RDS(on) trench technology.
	LP4935T1G	385Kb / 5P	P-Channel MOSFET Low RDS(on) trench technology.

About International Rectifier

International Rectifier (IR) was an American company that specialized in the design and manufacture of power management and power control semiconductors.
The company was founded in 1947 and was headquartered in El Segundo, California.
IR provided a wide range of products including power management ICs, power MOSFETs, IGBTs, and other power control products.
The company's products were used in various applications such as computing, telecommunications, and industrial automation.
IR was known for its expertise in power management and control technology and its ability to deliver high-quality and reliable products to its customers.
In 2014, IR was acquired by Infineon Technologies, a leading provider of power management and control products and other semiconductor solutions.
The International Rectifier brand is no longer in use, but its technology and products continue to be a part of Infineon's portfolio.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.

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