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STW77N65M5 Datasheet (PDF) - STMicroelectronics
STW77N65M5 Datasheet PDF - STMicroelectronics
Part # STW77N65M5
Download  STW77N65M5 Download
File Size   963.99 Kbytes
Page   14 Pages
Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics
Description N-channel 650 V, 0.033 ohm, 69 A, MDmesh V Power MOSFET TO-247

STW77N65M5 Datasheet (PDF)

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STW77N65M5 Datasheet PDF - STMicroelectronics

Part # STW77N65M5
Download  STW77N65M5 Click to download

File Size   963.99 Kbytes
Page   14 Pages
Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics
Description N-channel 650 V, 0.033 ohm, 69 A, MDmesh V Power MOSFET TO-247

STW77N65M5 Datasheet (HTML) - STMicroelectronics


STW77N65M5 Product details

Description
This device is a N-channel MDmesh™ V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on resistance, which is unmatched among silicon based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency.

Features
■ Higher VDSS rating
■ Higher dv/dt capability
■ Excellent switching performance
■ Easy to drive
■ 100% avalanche tested

Application
   Switching applications




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About STMicroelectronics

STMicroelectronics is a multinational electronics and semiconductor manufacturer based in Geneva, Switzerland.

The company offers a wide range of products including microcontrollers, sensors, power amplifiers, and integrated circuits for various applications in the automotive, industrial, and consumer markets.

Founded in 1987, STMicroelectronics has operations in over 100 countries and is one of the largest semiconductor companies in the world.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.




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