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AOW29S50 Datasheet (PDF) - Alpha & Omega Semiconductors
AOW29S50 Datasheet PDF - Alpha & Omega Semiconductors
Part # AOW29S50
Download  AOW29S50 Download
File Size   256.58 Kbytes
Page   6 Pages
Manufacturer  AOSMD [Alpha & Omega Semiconductors]
Direct Link  http://www.aosmd.com
Logo AOSMD - Alpha & Omega Semiconductors
Description 500V 29A a MOS TM Power Transistor

AOW29S50 Datasheet (PDF)

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AOW29S50 Datasheet PDF - Alpha & Omega Semiconductors

Part # AOW29S50
Download  AOW29S50 Click to download

File Size   256.58 Kbytes
Page   6 Pages
Manufacturer  AOSMD [Alpha & Omega Semiconductors]
Direct Link  http://www.aosmd.com
Logo AOSMD - Alpha & Omega Semiconductors
Description 500V 29A a MOS TM Power Transistor

AOW29S50 Datasheet (HTML) - Alpha & Omega Semiconductors


AOW29S50 Product details

General Description
The AOW29S50 has been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications.
By providing low RDS(on), Qg and EOSS along with guaranteed avalanche capability this part can be adopted quickly into new and existing offline power supply designs. 

Product Summary
   VDS @ Tj,max  600V
   IDM                   120A
   RDS(ON),max 0.15Ω
   Qg,typ            26.6nC
   Eoss @ 400V   6.3µJ

   100% UIS Tested
   100% Rg Tested




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About Alpha & Omega Semiconductors

Alpha & Omega Semiconductors (AOS) is a global semiconductor company that specializes in the design and manufacture of power management integrated circuits (ICs).
The company was founded in 1995 and has its headquarters in San Jose, California.
AOS provides a wide range of power management solutions for applications in consumer electronics, computing, telecommunications, and industrial systems, among others.
The company is known for its cutting-edge technology and innovative products, and it has a strong reputation in the semiconductor industry.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.




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