BD249CG Datasheet(PDF) - ON Semiconductor

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BD249CG Datasheet (PDF) - ON Semiconductor

BD249CG Datasheet PDF - ON Semiconductor


Part #	BD249CG

Download	BD249CG Download

File Size	194.79 Kbytes

Page	6 Pages

Manufacturer	ONSEMI [ON Semiconductor]

Direct Link	http://www.onsemi.com

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Description

NPN High?뭁ower Transistor

BD249CG Datasheet (PDF)

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BD249CG Datasheet PDF - ON Semiconductor


Part #	BD249CG

Download	BD249CG Click to download

File Size	194.79 Kbytes

Page	6 Pages

Manufacturer	ONSEMI [ON Semiconductor]

Direct Link	http://www.onsemi.com

Logo

Description	NPN High?뭁ower Transistor

BD249CG Datasheet (HTML) - ON Semiconductor

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BD249CG Product details

NPN High−Power Transistor

NPN high−power transistors are for general−purpose power amplifier and switching applications.

Features
• ESD Ratings: Machine Model, C; > 400 V
Human Body Model, 3B; > 8000 V
• Epoxy Meets UL 94 V−0 @ 0.125
• Pb−Free Package is Available*

Similar Part No. - BD249CG

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Similar Description - BD249CG

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About ON Semiconductor

ON Semiconductor is a publicly traded company that designs, develops, and manufactures a wide range of semiconductor products for various applications, including automotive, computing, consumer, industrial, and communications markets.
The company was founded in 1999 and is headquartered in Phoenix, Arizona.
ON Semiconductor offers a broad portfolio of power management, analog, and discrete semiconductors, including power MOSFETs, diodes, rectifiers, and voltage regulators, among others.
The company's products are designed to be energy efficient, reliable, and cost-effective, and are used in a variety of applications, including portable electronics, industrial automation systems, renewable energy systems, and automotive electronics.
ON Semiconductor is dedicated to innovation and customer satisfaction, and is committed to providing its customers with the best semiconductor solutions to meet their needs.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.

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