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HMT112R7AFP8C Datasheet (PDF) - Hynix Semiconductor

HMT112R7AFP8C Datasheet PDF - Hynix Semiconductor
Part # HMT112R7AFP8C
Download  HMT112R7AFP8C Download
File Size   1654.55 Kbytes
Page   41 Pages
Manufacturer  HYNIX [Hynix Semiconductor]
Direct Link  http://www.skhynix.com/kor/main.do
Logo HYNIX - Hynix Semiconductor
Description DDR3 SDRAM Registered DIMM Based on 1Gb A version

HMT112R7AFP8C Datasheet (PDF)

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HMT112R7AFP8C Datasheet PDF - Hynix Semiconductor

Part # HMT112R7AFP8C
Download  HMT112R7AFP8C Click to download

File Size   1654.55 Kbytes
Page   41 Pages
Manufacturer  HYNIX [Hynix Semiconductor]
Direct Link  http://www.skhynix.com/kor/main.do
Logo HYNIX - Hynix Semiconductor
Description DDR3 SDRAM Registered DIMM Based on 1Gb A version

HMT112R7AFP8C Datasheet (HTML) - Hynix Semiconductor


HMT112R7AFP8C Product details

Description
This Hynix DDR3 SDRAM Registered Dual In-Line Memory Module (DIMM) series consists of 1Gb A generation. These are intended for use as main memory in server and workstation systems, providing a high performance 8 byte interface in 133.35mm width form factor of industry standard. It is suitable for easy interchange and addition.

Features
• VDD=VDDQ=1.5V
• VDDSPD=3.3V to 3.6V
• Fully differential clock inputs (CK, CK) operation
• Differential Data Strobe (DQS, DQS)
• On chip DLL align DQ, DQS and /DQS transition with CK transition
• DM masks write data-in at the both rising and falling edges of the data strobe
• All addresses and control inputs except data, data strobes and data masks latched on the rising edges of the clock
• Programmable CAS latency 5, 6, 7, 8, 9, 10, and (11) supported
• Programmable additive latency 0, CL-1, and CL-2 sup ported
• Programmable CAS Write latency (CWL) = 5, 6, 7, 8
• Programmable burst length 4/8 with both nibble sequential and interleave mode
• BL switch on the fly
• 8 banks
• 8K refresh cycles /64ms
• DDR3 SDRAM Package: JEDEC standard 78ball FBGA(x4/x8), 96ball FBGA(x16) with support balls
• Driver strength selected by EMRS
• Dynamic On Die Termination supported
• Asynchronous RESET pin supported
• ZQ calibration supported
• TDQS (Termination Data Strobe) supported (x8 device based only)
• Write Levelization supported
• Auto Self Refresh supported
• 8 bit pre-fetch
• Heat Spreader installed for 4GB/8GB
• SPD with Integrated TS of Class B




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About Hynix Semiconductor


Hynix Semiconductor is a South Korean company that specializes in the design and manufacture of memory semiconductors.
The company was founded in 1983 and is headquartered in Icheon, South Korea.
Hynix is one of the world's leading producers of DRAM (dynamic random access memory) and NAND flash memory, which are used in various applications such as computer systems, mobile devices, and solid-state drives.
Hynix is known for its expertise in memory semiconductor technology and its ability to deliver high-quality and high-performance memory products to its customers.
The company has operations and facilities in various countries across the world and works closely with its customers to provide customized memory solutions that meet their specific requirements and needs.
In addition to its memory products, Hynix also provides a range of products and solutions for the automotive and data center markets, such as system-on-a-chip (SoC) products and high-bandwidth memory (HBM) products.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.




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