N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN ISOTOP PACKAGE

■ HIGH CURRENT POWER MODULE
■ AVALANCHE RUGGED TECHNOLOGY
■ VERY LARGE SOA - LARGE PEAK POWER CAPABILITY
■ EASY TO MOUNT
■ SAME CURRENT CAPABILITY FOR THE TWO SOURCE TERMINALS
■ EXTREMELY LOW Rth JUNCTION TO CASE
■ VERY LOW DRAIN TO CASE CAPACITANCE
■ VERY LOW INTERNAL PARASITIC INDUCTANCE (TYPICALLY < 5 nH)
■ ISOLATED PACKAGE UL RECOGNIZED (FILE No E81743)

INDUSTRIAL APPLICATIONS:
■ SMPS & UPS
■ MOTOR CONTROL
■ WELDING EQUIPMENT
■ OUTPUT STAGE FOR PWM, ULTRASONIC CIRCUITS