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AOD4100 Datasheet (PDF) - Alpha & Omega Semiconductors

AOD4100 Datasheet PDF - Alpha & Omega Semiconductors
Part # AOD4100
Download  AOD4100 Download
File Size   209.46 Kbytes
Page   6 Pages
Manufacturer  AOSMD [Alpha & Omega Semiconductors]
Direct Link  http://www.aosmd.com
Logo AOSMD - Alpha & Omega Semiconductors
Description N-Channel Enhancement Mode Field Effect Transistor

AOD4100 Datasheet (PDF)

Go To PDF Page Download Datasheet
AOD4100 Datasheet PDF - Alpha & Omega Semiconductors

Part # AOD4100
Download  AOD4100 Click to download

File Size   209.46 Kbytes
Page   6 Pages
Manufacturer  AOSMD [Alpha & Omega Semiconductors]
Direct Link  http://www.aosmd.com
Logo AOSMD - Alpha & Omega Semiconductors
Description N-Channel Enhancement Mode Field Effect Transistor

AOD4100 Datasheet (HTML) - Alpha & Omega Semiconductors


AOD4100 Product details

General Description
The AOD4100 uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity and body diode characteristics. This device is ideally suited for use as a High side switch in CPU core power conversion.

-RoHS Compliant
-Halogen Free*

Features
    VDS (V) = 25V
    ID = 50A (VGS = 10V)
    RDS(ON) < 6.5mΩ (VGS = 20V)
    RDS(ON) < 9mΩ (VGS = 12V)
    RDS(ON) < 12mΩ (VGS = 10V)

                    100% UIS Tested!
                    100% Rg Tested!




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About Alpha & Omega Semiconductors


Alpha & Omega Semiconductors (AOS) is a global semiconductor company that specializes in the design and manufacture of power management integrated circuits (ICs).
The company was founded in 1995 and has its headquarters in San Jose, California.
AOS provides a wide range of power management solutions for applications in consumer electronics, computing, telecommunications, and industrial systems, among others.
The company is known for its cutting-edge technology and innovative products, and it has a strong reputation in the semiconductor industry.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.




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