RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs

Designed for GSM and EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. Specified for GSM 1805-1880 MHz.

• Typical GSM Performance:
   Power Gain - 14 dB (Typ) @ 30 Watts
   Efficiency - 50% (Typ) @ 30 Watts
• Capable of Handling 5:1 VSWR, @ 26 Vdc, 30 Watts CW Output Power

Features
• Internally Matched for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Low Gold Plating Thickness on Leads, 40μ″ Nominal.
• RoHS Compliant
• in Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 inch Reel.