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STP16NS25 Datasheet (PDF) - STMicroelectronics
STP16NS25 Datasheet PDF - STMicroelectronics
Part # STP16NS25
Download  STP16NS25 Download
File Size   330.67 Kbytes
Page   9 Pages
Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics
Description N-CHANNEL 250V - 0.23ohm - 16A TO-220 / TO-220FP MESH OVERLAY™ MOSFET

STP16NS25 Datasheet (PDF)

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STP16NS25 Datasheet PDF - STMicroelectronics

Part # STP16NS25
Download  STP16NS25 Click to download

File Size   330.67 Kbytes
Page   9 Pages
Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics
Description N-CHANNEL 250V - 0.23ohm - 16A TO-220 / TO-220FP MESH OVERLAY™ MOSFET

STP16NS25 Datasheet (HTML) - STMicroelectronics


STP16NS25 Product details

DESCRIPTION

Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performance. The new patented STrip layout coupled with the Company’s proprietary edge termination structure, makes it suitable in coverters for lighting applications.



■ TYPICAL RDS(on) = 0.23 Ω

■ EXTREMELY HIGH dv/dt CAPABILITY

■ 100% AVALANCHE TESTED



APPLICATIONS

■ HIGH CURRENT, HIGH SPEED SWITCHING

■ SWITH MODE POWER SUPPLIES (SMPS)

■ DC-DC CONVERTERS FOR TELECOM, INDUSTRIAL, AND LIGHTING EQUIPMENT

■ IDEAL FOR MONITOR’s B+ FUNCTION



 




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About STMicroelectronics

STMicroelectronics is a multinational electronics and semiconductor manufacturer based in Geneva, Switzerland.

The company offers a wide range of products including microcontrollers, sensors, power amplifiers, and integrated circuits for various applications in the automotive, industrial, and consumer markets.

Founded in 1987, STMicroelectronics has operations in over 100 countries and is one of the largest semiconductor companies in the world.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.




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