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STTH8R04FP Datasheet (PDF) - STMicroelectronics

STTH8R04FP Datasheet PDF - STMicroelectronics
Part # STTH8R04FP
Download  STTH8R04FP Download
File Size   157.86 Kbytes
Page   11 Pages
Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics
Description Ultrafast recovery diode

STTH8R04FP Datasheet (PDF)

Go To PDF Page Download Datasheet
STTH8R04FP Datasheet PDF - STMicroelectronics

Part # STTH8R04FP
Download  STTH8R04FP Click to download

File Size   157.86 Kbytes
Page   11 Pages
Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics
Description Ultrafast recovery diode

STTH8R04FP Datasheet (HTML) - STMicroelectronics


STTH8R04FP Product details

Description
The STTH8R04 series uses STs new 400 V planar Pt doping technology. The STTH8R04 is specially suited for switching mode base drive and transistor circuits.
Packaged in through-the-hole and surface mount packages, this device is intended for use in low voltage, high frequency inverters, free wheeling and polarity protection.

Features and benefits
■ Very low switching losses
■ High frequency and high pulsed current operation
■ High junction temperature
■ Insulated packages
   – TO-220AC Ins
      Electrical insulation = 2500 V RMS
      Capacitance = 7 pF
   – TO-220FPAC
      Electrical insulation = 1500 V RMS
      Capacitance = 12 pF




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About STMicroelectronics


STMicroelectronics is a multinational electronics and semiconductor manufacturer based in Geneva, Switzerland.

The company offers a wide range of products including microcontrollers, sensors, power amplifiers, and integrated circuits for various applications in the automotive, industrial, and consumer markets.

Founded in 1987, STMicroelectronics has operations in over 100 countries and is one of the largest semiconductor companies in the world.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.




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