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MSC83305 Datasheet (PDF) - STMicroelectronics
MSC83305 Datasheet PDF - STMicroelectronics
Part # MSC83305
Download  MSC83305 Download
File Size   123.05 Kbytes
Page   5 Pages
Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics
Description RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS

MSC83305 Datasheet (PDF)

Go To PDF Page Download Datasheet
MSC83305 Datasheet PDF - STMicroelectronics

Part # MSC83305
Download  MSC83305 Click to download

File Size   123.05 Kbytes
Page   5 Pages
Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics
Description RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS

MSC83305 Datasheet (HTML) - STMicroelectronics


MSC83305 Product details

DESCRIPTION

The MSC83305 is a common base hermetically sealed silicon NPN microwave power transistor utilizing an emitter site ballasted geometry with a refractory gold metallization system. This device is capable of withstanding an infinite load VSWR at any phase angle under rated conditions. The MSC83305 was designed for Class C amplifier/oscillator applications in the 1.0 - 3.0 GHz frequency range.



. REFRACTORY/GOLD METALLIZATION

. EMITTER BALLASTED

. VSWR CAPABILITY ∞:1 @ RATED CONDITIONS

. HERMETIC STRIPAC PACKAGE

. POUT = 4.5 W MIN. WITH 4.5 dB GAIN @ 3.0 GHz



 




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About STMicroelectronics

STMicroelectronics is a multinational electronics and semiconductor manufacturer based in Geneva, Switzerland.

The company offers a wide range of products including microcontrollers, sensors, power amplifiers, and integrated circuits for various applications in the automotive, industrial, and consumer markets.

Founded in 1987, STMicroelectronics has operations in over 100 countries and is one of the largest semiconductor companies in the world.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.




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