Description
The V29LC51000 is a high speed 65,536 x 8 bit CMOS flash memory. Programming or erasing the device is done with a single 5 Volt power supply. The device has separate chip enable CE, program enable WE, and output enable OE controls to eliminate bus contention.
The V29LC51000 features a sector erase operation which allows each sector to be erased and reprogrammed without affecting data stored in other sectors. The device also supports full chip erase.

Features
■ 64Kx8-bit Organization
■ Address Access Time: 90 ns
■ Single 5V ± 10% Power Supply
■ Sector Erase Mode Operation
■ 512 bytes per Sector, 128 Sectors
   – Sector-Erase Cycle Time: 10ms (Max)
   – Byte-Program Cycle Time: 30µs (Max)
■ Minimum 1,000 Erase-Program Cycles
■ Low power dissipation
   – Active Read Current: 20mA (Typ)
   – Active Program Current: 30mA (Typ)
   – Standby Current: 100µA (Max)
■ Low VCC Program Inhibit Below 3.2V
■ Self-timed program/erase operations
■ CMOS and TTL Interface
■ Packages:
   – 32-pin Plastic DIP
   – 32-pin PLCC