Description
These N-channel Enhanced VDMOSFETs, is obtained by
the self-aligned planar technology which reduce the
conduction loss, improve switching performance and
enhance the avalanche energy. Which accords with the
RoHS standard.

Features
● Fast Switching
● ESD Improved Capability
● Low ON Resistance(Rdson≤2.5Ω)
● Low Gate Charge(Typical Data:14.5nC)
● Low Reverse Transfer Capacitances(Typical:4pF)
● 100% Single Pulse Avalanche Energy Test
● 100% ΔVDS Test

Applications
● used in various power switching circuit for system
miniaturization and higher efficiency. ● Power switch circuit of electron ballast and adaptor.