FEATURES
n ESPECIALLY SUITED AS BOOST DIODE IN
CONTINUOUS MODE POWER FACTOR
CORRECTORS AND HARD SWITCHING
CONDITIONS
n DESIGNED FOR HIGH dIF/dt OPERATION.
HYPERFAST RECOVERY CURRENT TO
COMPETE WITH SiC DEVICES. ALLOWS
DOWNSIZING OF MOSFET AND HEATSINKS
n INTERNAL CERAMIC INSULATED DEVICES
WITH EQUAL THERMAL CONDITIONS FOR
BOTH 300V DIODES
n INSULATION (2500VRMS) ALLOWS
PLACEMENT ON SAME HEATSINK AS
MOSFET FLEXIBLE HEATSINKING ON
COMMON OR SEPARATE HEATSINK.
n STATIC AND DYNAMIC EQUILIBRIUM OF
INTERNAL DIODES ARE WARRANTED BY
DESIGN
n PACKAGE CAPACITANCE: C=16pF