Features
• AEC-Q100 qualified
• RoHs compliant device
• Power supply operating range from 4.51 V to 28 V (gate drivers operative from
5.41 V)
• 3.3 V/5 V compatible I/Os
• All pins linked to the microcontroller, fail-safe input and VDD are made tolerant
to battery exposure
• Dual half-bridge driver compatible with standard level threshold NMOSFETs
• Configurable full-bridge or dual independent half-bridges control
– Programmable recirculation path in case of full-bridge control
• Dual stage charge pump supporting 100% PWM duty cycle down to 5.41 V
battery voltage
– High and low side minimum VGS=6.2 V @ VDH=5.5 V and charge pump
load current (ICPLOAD) equal to 5 mA
– High and low side minimum VGS=8.2 V @ VDH≥8 V and charge pump
load current (ICPLOAD) equal to 10 mA
• Charge pump output available for driving an external reverse battery
NMOSFET protection
• Programmable gate driving current (up to 170 mA) for output voltage slew rate
control
• Programmable drain-source monitoring for overcurrent protection and
programmable cross-current protection time (dead-time)
• Open load and output short circuit detection in off-state diagnostic mode
• SPI for control and diagnosis (ST SPI 4.1)
• Programmable diagnostic output
• Two independent current sense amplifiers
– Low offset with extremely low thermal drift
– Suitable for high-side, in-line and low–side current sensing
– Independently programmable gain (10x, 20x, 50x, 100x)
– Analog output centered at VDD/2 or VDD/22
• Overtemperature prewarning and shutdown
• Analog and digital power supply inputs over/undervoltage protections
• Asynchronous and logic independent fail-safe input to switch off all
the MOSFETs
• Low quiescent current
• Support for random HW faults up to ASIL B