1 Features
1• Dual-Channel, Individual SPI™-Controlled DVGA
• Single 5-V Supply
• –3-dB Bandwidth: 1.1 GHz (Max Gain)
• Flat Bandwidth Response: 300 MHz
• Channel-to-Channel Gain Matching: ±0.05 dB
• Channel-to-Channel Phase Matching: ±0.1°
• Gain:
– 30 dB to –9 dB
– 1-dB Steps ±0.2 dB
• Output Third-Order Intercept Point (OIP3):
– 43 dBm at 300 MHz
– 51 dBm at 200 MHz
• Noise Figure (NF):
– 6.5 dB (Max Gain) at 300 MHz, ZIN = 150 Ω
• Adjustable Power Consumption:
– 90 mA to 108 mA per Channel
• Power-Saving, Power-Down Feature:
– IQ < 4.5 mA per Channel
– Power-Down Pin and SPI Programmability
• Input Return Loss at 300 MHz:
– 17 dB (RS = 150 Ω)

2 Applications
• DOCSIS 3.1 CMTS Upstream Direct Sampling
Receivers
• CATV Modem Signal Scaling
• Programmable Gain IF Amplifiers
• Generic RF, IF Gain Stages
• ADC Drivers

3 Description
The LMH2832 is a high-linearity, dual-channel, digital
variable-gain amplifier (DVGA) for high-speed signal
chain and data-acquisition systems. The LMH2832 is
optimized to provide high bandwidth, low distortion,
and low noise, thus making the device ideally suited
as a dual, 14-bit, analog-to-digital converter (ADC)
driver. The device consists of one fixed-gain block
and one variable attenuator consisting of a total gain
of 30 dB with a maximum attenuation of 39 dB. The
gain range is from 30 dB to –9 dB in 1-dB gain steps
with a gain accuracy of ±0.2 dB. The input impedance
can be easily matched to 50-Ω or 75-Ω systems using
a 1:3-Ω or 1:2-Ω ratio balun, respectively. The
LMH2832 is designed to drive general-purpose ADCs
and also meets the requirements for both data over
cable service interface specification (DOCSIS) 3.0 32
quadrature amplitude modulation (QAM) carriers and
DOCSIS 3.1 wideband orthogonal frequency-division
multiplexing (OFDM) systems. With excellent NF
(6.5 dB) and linearity, the LMH2832 is designed to
perform to within DOCSIS specifications. The
quiescent current in the power-down state is less
than 5 mA per channel with the typical current
consumption during operation at 105 mA per channel.