1 Features
• VID TBD-01XE
• Radiation - Total Ionizing Dose (TID):
– TID characterized up to 50krad(Si)
– TID performance assurance up to 30krad(Si)
– Radiation Lot Acceptance Testing (RLAT) for
every wafer lot up to 30krad(Si)
• Radiation - Single-Event Effects (SEE):
– Single Event Latch-Up (SEL) immune up to
50MeV-cm2/mg at 125°C
– Single Event Transient (SET) characterized up
to LET = 50MeV-cm2/mg
• Wide operating range of 1.2V to 5.5V
• 5.5V tolerant input pins
• Supports standard pinouts
• Up to 150Mbps with 5V or 3.3V VCC
• Latch-up performance exceeds 100mA per JESD
78
• Space enhanced plastic:
– Supports Defense and Aerospace Applications
– Controlled baseline
– Au bondwire and NiPdAu lead finish
– Meets NASA ASTM E595 outgassing
specification
– One fabrication, assembly, and test site
– Extended product life cycle
– Product traceability

2 Applications
• Enable or disable a digital signal
• Controlling an indicator LED

3 Description
The SN54SC1G08-SEP device performs the Boolean
function or Y = A • B or Y = A + B in positive logic.
The CMOS device has high output drive while
maintaining low static power dissipation over a broad
VCC operating range.