1 Features
1• Low-Side, Ultra-Fast Gate Driver for GaN and
Silicon FETs
• 1 ns Minimum Input Pulse Width
• Up to 60 MHz Operation
• 2.5 ns Typical, 4.5 ns Maximum Propagation
Delay
• 400 ps Typical Rise and Fall Time
• 7-A Peak Source and 5-A Peak Sink Currents
• 5-V Supply Voltage
• UVLO and Overtemperature Protection
• 0.8 mm × 1.2 mm WCSP Package

2 Applications
• LiDAR
• Time-of-Flight Laser Drivers
• Facial Recognition
• Class-E Wireless Chargers
• VHF Resonant Power Converters
• GaN-Based Synchronous Rectifier
• Augmented Reality

3 Description
The LMG1020 device is a single, low-side driver
designed for driving GaN FETs and logic-level
MOSFETs in high-speed applications including
LiDAR, time-of-flight, facial recognition, and any
power converters involving low side drivers. The
design simplicity of the LMG1020 enables extremely
fast propagation delays of 2.5 nanoseconds and
minimum pulse width of 1 nanosecond. The drive
strength is independently adjustable for the pull-up
and pull-down edges by connecting external resistors
between the gate and OUTH and OUTL, respectively.
The driver features undervoltage lockout (UVLO) and
overtemperature protection (OTP) in the event of
overload or fault conditions.
0.8-mm × 1.2-mm WCSP package of LMG1020
minimizes gate loop inductance and maximizes
power density in high-frequency applications.