Description:
Complementary silicon power transistors.
The 2N6609 powerbaseTM power transistors designed for high power audio, disk head positioners and other linear applications. These devices can also be used in power switching circuits such as relay or solenoid drivers, DC-DC converters or inverters.

Features:
• Pb-free packages
• High safe operating area (100% tested) 150W at 100V
• Completely characterized for linear operation
• High DC current gain and low saturation voltage
• hFE = 15 (min.) at 8A, 4V
• VCE (sat) = 1.4V (max.) at IC = 8A, IB = 0.8A
• For low distortion complementary designs

Description
Transistor, PNP, TO-3