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TPS2310 Datasheet (PDF) - Texas Instruments

TPS2310 Datasheet PDF - Texas Instruments
Part # TPS2310
Download  TPS2310 Download
File Size   674.76 Kbytes
Page   29 Pages
Manufacturer  TI2 [Texas Instruments]
Direct Link  https://www.ti.com
Logo TI2 - Texas Instruments
Description DUAL HOT-SWAP POWER CONTROLLERS WITH INTERDEPENDENT CIRCUIT BREAKER AND POWER-GOOD REPORTING

TPS2310 Datasheet (PDF)

Go To PDF Page Download Datasheet
TPS2310 Datasheet PDF - Texas Instruments

Part # TPS2310
Download  TPS2310 Click to download

File Size   674.76 Kbytes
Page   29 Pages
Manufacturer  TI2 [Texas Instruments]
Direct Link  https://www.ti.com
Logo TI2 - Texas Instruments
Description DUAL HOT-SWAP POWER CONTROLLERS WITH INTERDEPENDENT CIRCUIT BREAKER AND POWER-GOOD REPORTING

TPS2310 Datasheet (HTML) - Texas Instruments


TPS2310 Product details

1FEATURES
• Dual-Channel High-Side MOSFET Drivers
• IN1: 3 V to 13 V; IN2: 3 V to 5.5 V
• Output dV/dt Control Limits Inrush Current
• Circuit-Breaker With Programmable
Overcurrent Threshold and Transient Timer
• Power-Good Reporting With Transient Filter
• CMOS- and TTL-Compatible Enable Input
• Low, 5-μA Standby Supply Current .(Max)
• Available in 20-Pin TSSOP Package
• –40°C to 85°C Ambient Temperature Range
• Electrostatic Discharge Protection

APPLICATIONS
• Hot-Swap/Plug/Dock Power Management
• Hot-Plug PCI, Device Bay
• Electronic Circuit Breaker

DESCRIPTION
The TPS2310 and TPS2311 are dual-channel hotswap
controllers that use external N-channel
MOSFETs as high-side switches in power
applications. Features of these devices, such as
overcurrent protection (OCP), inrush current control,
output-power status reporting, and the ability to
discriminate between load transients and faults, are
critical requirements for hot-swap applications.
The TPS2310/11 devices incorporate undervoltage lockout (UVLO) and power-good (PG) reporting to ensure the
device is off at start-up and confirm the status of the output voltage rails during operation. Each internal charge
pump, capable of driving multiple MOSFETs, provides enough gate-drive voltage to fully enhance the N-channel
MOSFETs. The charge pumps control both the rise times and fall times (dv/dt) of the MOSFETs, reducing power
transients during power up/down. The circuit-breaker functionality combines the ability to sense overcurrent
conditions with a timer function; this allows designs such as DSPs, that may have high peak currents during
power-state transitions, to disregard transients for a programmable period.




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