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TLV2352ID Datasheet (PDF) - Texas Instruments

TLV2352ID Datasheet PDF - Texas Instruments
Part # TLV2352ID
Download  TLV2352ID Download
File Size   423.13 Kbytes
Page   25 Pages
Manufacturer  TI2 [Texas Instruments]
Direct Link  https://www.ti.com
Logo TI2 - Texas Instruments
Description LinCMOSE DUAL LOW-VOLTAGE DIFFERENTIAL COMPARATORS

TLV2352ID Datasheet (PDF)

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TLV2352ID Datasheet PDF - Texas Instruments

Part # TLV2352ID
Download  TLV2352ID Click to download

File Size   423.13 Kbytes
Page   25 Pages
Manufacturer  TI2 [Texas Instruments]
Direct Link  https://www.ti.com
Logo TI2 - Texas Instruments
Description LinCMOSE DUAL LOW-VOLTAGE DIFFERENTIAL COMPARATORS

TLV2352ID Datasheet (HTML) - Texas Instruments


TLV2352ID Product details

Wide Range of Supply Voltages
2 V to 8 V
Fully Characterized at 3 V and 5 V
Very-Low Supply-Current Drain
120 mA Typ at 3 V
Output Compatible With TTL, MOS, and
CMOS
Fast Response Time . . . 200 ns Typ for
TTL-Level Input Step
High Input Impedance . . . 1012 W Typ
Extremely Low Input Bias Current
5 pA Typ
Common-Mode Input Voltage Range
Includes Ground
Built-In ESD Protection

description
The TLV2352 consists of two independent,
low-power comparators specifically designed for
single power-supply applications and operates
with power-supply rails as low as 2 V. When
powered from a 3-V supply, the typical supply
current is only 120 mA.
The TLV2352 is designed using the Texas Instruments LinCMOSE technology and therefore features an
extremely high input impedance (typically greater than 1012 W), which allows direct interfacing with
high-impedance sources. The outputs are N-channel open-drain configurations that require an external pullup
resistor to provide a positive output voltage swing, and they can be connected to achieve positive-logic
wired-AND relationships. The TLV2352I is fully characterized at 3 V and 5 V for operation from – 40°C to 85°C.
The TLV2352M is fully characterized at 3 V and 5 V for operation from – 55°C to 125°C.
The TLV2352 has internal electrostatic-discharge (ESD)-protection circuits and has been classified with a
1000-V ESD rating using Human Body Model testing. However, care should be exercised in handling this device
as exposure to ESD may result in degradation of the device parametric performance.




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