General Description
These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

Features
· 6 A, 30 V. RDS(ON) = 28 mW @ VGS = 10 V RDS(ON) = 35 mW @ VGS = 4.5 V
· Fast switching speed
· Low gate charge
· High performance trench technology for extremely low RDS(ON)
· High power and current handling capability