General Description
These P-Channel enhancement mode power field effect
transistors are using trench DMOS technology. This
advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are
well suited for high efficiency fast switching applications

Features
-40V,-10A, RDS(ON) =15mΩ@VGS = -10V
Fast switching
Green Device Available
Suit for -4.5V Gate Drive Applications

Applications
MB / VGA / Vcore
POL Applications
Load Switch
LED Application