DESCRIPTION
The SVT035R5ND(MJ)(T) is an N-channel enhancement mode
power MOS field effect transistor which is produced using Silan's
LVMOS technology. The improved process and cell structure have
been especially tailored to minimize on-state resistance, provide
superior switching performance.
This device is widely used in the fields of uninterruptible power
supplies and power management of inverter systems.

FEATURES
 100A, 30V, RDS(on)(typ.)=4.0m@VGS=10V
 Low gate charge
 Low Crss
 Fast switching
 Improved dv/dt capability