Features
• CMOS 3.0 V core with versatile I/O
• Two 1024 Mb (S29GL01GT) in a single 64-ball fortified-BGA package (see the S29GL01GT datasheet for full
specifications)
• 45 nm MIRRORBIT™ process technology
• Single supply (VCC) for read/program/erase (2.7 V to 3.6 V)
• Versatile I/O feature
- Wide I/O voltage (VIO): 1.65 V to VCC
• ×8 and ×16 data bus
• 16-word/32-byte page read buffer
• 512-byte programming buffer
- Programming in page multiples, up to a maximum of 512 bytes
• Sector erase
- Uniform 128-KB sectors
- S70GL02GT: 2048 sectors
• Suspend and Resume commands for program and erase operations
• Status Register, data polling, and ready/busy pin methods to determine device status
• Advanced sector protection (ASP)
- Volatile and non-volatile protection methods for each sector
• Separate 1024-bye one time program (OTP) array with two lockable regions
- Each device supports common flash interface (CFI)
• WP# input
- Protects the last sector of the device, regardless of sector protection settings
• Temperature range/grade
- Industrial (–40°C to +85°C)
- Industrial Plus (–40°C to +105°C)
- Automotive, AEC-Q100 grade 3 (–40°C to +85°C)
- Automotive, AEC-Q100 grade 2 (–40°C to +105°C)
• 100,000 program-erase cycles
• 20-year data retention
• Packaging options
- 64-ball LSH fortified BGA, 13 mm × 11 mm