Description
The LBR-129HLD consist of an infrared emitting diode and an NPN silicon phototransistor, encased
side-by-side on converging optical axis in a black thermoplastic housing. The phototransistor receives radiation
from the IRED only. This is the normal situation. But when an object is in between, phototransistor could not
receive the radiation.
Lead-free lead wire is tin-plated to prevent oxidation through the pollution of Sulfide in the air. Security
ball is added into wire-bonding procedure in order to increase bonding strength.

Features
˙Fast response time
˙High sensitivity
˙Cut-off visible wavelength λ=840nm
˙High analytic

Applications
˙For Direct PC Board
˙Mouse Copier
˙Non-contact Switching
˙Switch Scanner