Description
The NCE603583 uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.

General Features
N channel
● VDS =60V,ID =40A
RDS(ON) <15.5mΩ @ VGS=10V
RDS(ON) <22mΩ @ VGS=4.5V
p channel
● VDS =-60V,ID =-35A
RDS(ON) <35mΩ @ VGS=-10V
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation
● Special process technology for high ESD capability
Application
● H-bridge
● Inverters