DESCRIPTION
STN4438 is the N-Channel logic enhancement mode power field effect transistor which
is produced using high cell density, DMOS trench technology. This high density
process is especially tailored to minimize on-state resistance. These devices are
particularly suited for low voltage application such as power management and other
battery powered circuits where high-side switching.



FEATURE
60V/8.2A, RDS(ON)= 35mΩ (Typ.)
@VGS = 10V
60V/7.6A, RDS(ON)= 45mΩ
@VGS = 4.5V
Super high density cell design for
extremely low RDS(ON)
Exceptional on-resistance and maximum
DC current capability
SOP-8 package design