High ESD withstand Voltage: ±15kV (air), ±8kV
(contact) per IEC 61000-4-2
Multiple surge event capability (1000 events) per IEC
61000-4-2 Level 4
High peak power capability (120W)
Flow-through design minimizes parasitic inductance
for reduced voltage overshoot
Protects two line pairs
Low reverse “idle” current: 30nA typical (VR=2.8V)
Low variation in capacitance vs. bias voltage:
1.3pF Typical (VR = 0 to 2.8V)
Low working voltage: 2.8V
Solid-state silicon design – no inherent wear out
mechanism
Industry standard package footprint