The MA5104 4k Static RAM is configured as 4096 x 1 bits and manufactured using CMOS-SOS high performance, radiation hard, 3µm technology.
The device has separate input and output terminals controlled by Chip Select and Write Enable. The design uses a 6 transistor cell and has full static operation with no clock or timing strobe required. Address input buffers are deselected when Chip Select is in the HIGH state.

FEATURES
■ 3µm CMOS-SOS Technology
■ Latch-up Free
■ Fast Access Time 90ns Typical
■ Total Dose 106 Rad(Si)
■ Transient Upset >1010 Rad(Si)/sec
■ SEU <10-10 Errors/bitday
■ Single 5V Supply
■ Three State Output
■ Low Standby Current 10µA Typical
■ -55°C to +125°C Operation
■ All Inputs and Outputs Fully TTL or CMOS Compatible
■ Fully Static Operation