1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product is designed and qualified for use in
computing, communications, consumer and industrial applications only.
1.2 Features and benefits
Low conduction losses due to low
on-state resistance
Simple gate drive required due to low
gate charge
Suitable for high frequency
applications due to fast switching
characteristics
1.3 Applications
DC-to-DC convertors
Lithium-ion battery applications
Notebook computers
Portable equipment