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UPC2918 Datasheet (PDF) - Renesas Technology Corp

UPC2918 Datasheet PDF - Renesas Technology Corp
Part # UPC2918
Download  UPC2918 Download
File Size   403.4 Kbytes
Page   10 Pages
Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp
Description BiCMOS INTEGRATED CIRCUIT

UPC2918 Datasheet (PDF)

Go To PDF Page Download Datasheet
UPC2918 Datasheet PDF - Renesas Technology Corp

Part # UPC2918
Download  UPC2918 Click to download

File Size   403.4 Kbytes
Page   10 Pages
Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp
Description BiCMOS INTEGRATED CIRCUIT

UPC2918 Datasheet (HTML) - Renesas Technology Corp


UPC2918 Product details

FEATURES
• Only PIN photodiode required as an external component.
• Following carrier frequencies (fO) selectable (six types):
μ PC2807H : fO = 32.7, 36.0, 36.7, 37.9, 56.7 kHz
μ PC2807HA : fO = 40.0 kHz
• Fixed trap frequency
fT = 54 kHz (when carrier frequency is 56.7 kHz, trap frequency is 76 kHz)
• Active-low output
• High-speed rise and fall time of output pulse (less than 2 μ s)
• Supplied in form of wafer




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About Renesas Technology Corp


Renesas Technology Corp is a Japanese semiconductor company that provides a wide range of microcontrollers, system-on-chips, and analog and power devices for various applications in the automotive, industrial, and consumer markets.
The company was formed in 2010 through the merger of NEC Electronics Corporation and Renesas Technology Corporation.
Renesas is one of the largest microcontroller suppliers in the world and is known for its expertise in the development of advanced technologies in areas such as the Internet of Things (IoT), artificial intelligence (AI), and automotive electronics.
The company has operations in over 20 countries and its products are used in a wide range of applications.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.




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