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28F640L18 Datasheet (PDF) - Intel Corporation

28F640L18 Datasheet PDF - Intel Corporation
Part # 28F640L18
Download  28F640L18 Download
File Size   1699.19 Kbytes
Page   106 Pages
Manufacturer  INTEL [Intel Corporation]
Direct Link  http://www.intel.com
Logo INTEL - Intel Corporation
Description StrataFlash Wireless Memory

28F640L18 Datasheet (PDF)

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28F640L18 Datasheet PDF - Intel Corporation

Part # 28F640L18
Download  28F640L18 Click to download

File Size   1699.19 Kbytes
Page   106 Pages
Manufacturer  INTEL [Intel Corporation]
Direct Link  http://www.intel.com
Logo INTEL - Intel Corporation
Description StrataFlash Wireless Memory

28F640L18 Datasheet (HTML) - Intel Corporation


28F640L18 Product details

The Intel StrataFlash® wireless memory (L18) device is the latest generation of Intel StrataFlash® memory devices featuring flexible, multiple-partition, dual operation. It provides high performance synchronous-burst read mode and asynchronous read mode using 1.8 V low voltage, multi-level cell (MLC) technology.

Product Features
■ High performance Read-While-Write/Erase
  — 85 ns initial access
  — 54 MHz with zero wait state, 14 ns clock-to-data output synchronous-burst mode
  — 25 ns asynchronous-page mode
  — 4-, 8-, 16-, and continuous-word burst mode
  — Burst suspend
  — Programmable WAIT configuration
  — Buffered Enhanced Factory Programming (BEFP) at 5 µs/byte (Typ)
  — 1.8 V low-power buffered programming at7 µs/byte (Typ)
■ Architecture
  — Asymmetrically-blocked architecture
  — Multiple 8-Mbit partitions: 64-Mbit and 128-Mbit devices
  — Multiple 16-Mbit partitions: 256-Mbit devices
  — Four 16-Kword parameter blocks: top or bottom configurations
  — 64-Kword main blocks
  — Dual-operation: Read-While-Write (RWW) or Read-While-Erase (RWE)
  — Status Register for partition and device status
■ Power
  — VCC (core) = 1.7 V - 2.0 V
  — VCCQ (I/O) = 1.35 V - 2.0 V, 1.7 V - 2.0 V
  — Standby current: 30 µA (Typ) for 256-Mbit
  — 4-Word synchronous read current: 15 mA (Typ)at 54 MHz
  — Automatic Power Savings mode
■ Security
— OTP space:
• 64 unique factory device identifier bits
• 64 user-programmable OTP bits
• Additional 2048 user-programmable OTP bits
  — Absolute write protection: VPP = GND
  — Power-transition erase/program lockout
  — Individual zero-latency block locking
  — Individual block lock-down
■ Software
  — 20 µs (Typ) program suspend
  — 20 µs (Typ) erase suspend
  — Intel® Flash Data Integrator optimized
  — Basic Command Set (BCS) and Extended Command Set (ECS) compatible
  — Common Flash Interface (CFI) capable
■ Quality and Reliability
  — Expanded temperature: –25° C to +85° C
  — Minimum 100,000 erase cycles per block
  — ETOX™ VIII process technology (0.13 µm)
■ Density and Packaging
  — 64-, 128-, and 256-Mbit density in VF BGA packages
  — 128/0 and 256/0 density in SCSP
  — 16-bit wide data bus




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About Intel Corporation


Intel Corporation is an American multinational corporation and technology company headquartered in Santa Clara, California.
It is one of the world's largest and highest valued semiconductor chip makers, based on revenue.
Intel is best known for its development of microprocessors, the central processing units (CPUs) of computers.
Founded in 1968, Intel has been a leader in the computer hardware industry for over five decades.
In addition to microprocessors, the company offers a wide range of products and technologies, including data center and network equipment, solid-state drives, internet of things (IoT) devices, and more.
Intel is also a leading player in the development of 5G networks and autonomous vehicles.
With a focus on innovation and technology leadership, Intel continues to play a significant role in shaping the future of computing and technology.
The company invests heavily in research and development and has been awarded over 17,000 patents for its innovations.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.




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