1 Features
• 5.7-kVRMS single-channel isolated gate driver
• AEC-Q100 Qualified with the following results:
– Device temperature grade 0: -40°C to +150°C
ambient operating temperature range
– Device HBM ESD classification level 3A
– Device CDM ESD classification level C6
• Functional Safety Quality-Managed
– Documentation available to aid functional safety
system design
• SiC MOSFETs and IGBTs up to 2121 Vpk
• 33-V maximum output drive voltage (VDD-VEE)
• ±10-A drive strength and split output
• 150-V/ns minimum CMTI
• 200-ns response time fast DESAT protection with
5-V threshold
• 4-A internal active Miller clamp
• 900-mA soft turn-off when fault happens
• Isolated analog sensor with PWM output for
– Temperature sensing with NTC, PTC, or
thermal diode
– High voltage DC-link or phase voltage
• Alarm FLT on overcurrent and reset from RST/EN
• Fast enable/disable response on RST/EN
• Reject <40-ns noise transient and pulse on input
pins
• 12-V VDD UVLO with power good on RDY
• Inputs/outputs with over- or under-shoot transient
voltage immunity up to 5 V
• 130-ns (maximum) propagation delay and 30-ns
(maximum) pulse/part skew
• SOIC-16 DW package with creepage and
clearance distance > 8 mm
• Operating junction temperature –40°C to 150°C

2 Applications
• Traction inverter for EVs
• On-board charger and charging pile
• DC/DC converter for HEV/EVs

3 Description
The UCC21756-Q1 is a galvanic isolated single
channel gate driver designed for SiC MOSFETs
and IGBTs up to 2121-V DC operating voltage with
advanced protection features, best-in-class dynamic
performance, and robustness. UCC21756-Q1 has up
to ±10-A peak source and sink current.
The input side is isolated from the output side with
SiO2 capacitive isolation technology, supporting up to
1.5-kVRMS working voltage, 12.8-kVPK surge immunity
with longer than 40-years isolation barrier life, as well
as providing low part-to-part skew, and >150-V/ns
common mode noise immunity (CMTI).
The UCC21756-Q1 includes the state-of-art protection
features, such as fast overcurrent and short circuit
detection, fault reporting, active Miller clamp, and
input and output side power supply UVLO to optimize
SiC and IGBT switching behavior and robustness.
The isolated analog to PWM sensor can be utilized
for easier temperature or voltage sensing, further
increasing the drivers' versatility and simplifying the
system design effort, size, and cost.