2SJ356 Datasheet(PDF)

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2SJ356 Datasheet (PDF) - Renesas Technology Corp


Part #	2SJ356

Download	2SJ356 Download

File Size	269.38 Kbytes

Page	8 Pages

Manufacturer	RENESAS [Renesas Technology Corp]

Direct Link	http://www.renesas.com

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Description

MOS FIELD EFFECT TRANSISTOR

2SJ356 Datasheet (PDF)

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Part #	2SJ356

Download	2SJ356 Click to download

File Size	269.38 Kbytes

Page	8 Pages

Manufacturer	RENESAS [Renesas Technology Corp]

Direct Link	http://www.renesas.com

Logo

Description	MOS FIELD EFFECT TRANSISTOR

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2SJ356 Product details

P-CHANNEL MOS FET
FOR HIGH-SPEED SWITCHING

The 2SJ356 is a P-channel MOS FET of a vertical type and is
a switching element that can be directly driven by the output of an
IC operating at 5 V.
This product has a low ON resistance and superb switching
characteristics and is ideal for driving the actuators and DC/DC
converters.

FEATURES
• Can be directly driven by 5-V IC
• Low ON resistance
RDS(on) = 0.95 W MAX. @VGS = –4 V, ID = –1.0 A
RDS(on) = 0.50 W MAX. @VGS = –10 V, ID = –1.0 A

Similar Part No. - 2SJ356

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Similar Description - 2SJ356

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About Renesas Technology Corp

Renesas Technology Corp is a Japanese semiconductor company that provides a wide range of microcontrollers, system-on-chips, and analog and power devices for various applications in the automotive, industrial, and consumer markets.
The company was formed in 2010 through the merger of NEC Electronics Corporation and Renesas Technology Corporation.
Renesas is one of the largest microcontroller suppliers in the world and is known for its expertise in the development of advanced technologies in areas such as the Internet of Things (IoT), artificial intelligence (AI), and automotive electronics.
The company has operations in over 20 countries and its products are used in a wide range of applications.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.

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