DESCRIPTION
The H11Dx has a GaAs infrared emitting diode emitter,
which is optically coupled to a silicon planar phototransistor
detector, and is incorporated in a plastic DIP-6 package.
It features a high current transfer ratio, low coupling
capacitance, and high isolation voltage.
The coupling device is designed for signal transmission
between two electrically separated circuits.

FEATURES
• Very high collector emitter breakdown voltage
BVCEO = 300 V
• Isolation test voltage: 5000 VRMS
• Low coupling capacitance
• High common mode transient immunity
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912