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STL105DN4LF7AG Datasheet (PDF) - STMicroelectronics
STL105DN4LF7AG Datasheet PDF - STMicroelectronics
Part # STL105DN4LF7AG
Download  STL105DN4LF7AG Download
File Size   965.86 Kbytes
Page   16 Pages
Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics
Description Automotive-grade dual N-channel 40 V, 3.5 mΩ typ., 40 A STripFET™ F7 Power MOSFET in a PowerFLAT™ 5x6 DI

STL105DN4LF7AG Datasheet (PDF)

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STL105DN4LF7AG Datasheet PDF - STMicroelectronics

Part # STL105DN4LF7AG
Download  STL105DN4LF7AG Click to download

File Size   965.86 Kbytes
Page   16 Pages
Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics
Description Automotive-grade dual N-channel 40 V, 3.5 mΩ typ., 40 A STripFET™ F7 Power MOSFET in a PowerFLAT™ 5x6 DI

STL105DN4LF7AG Datasheet (HTML) - STMicroelectronics


STL105DN4LF7AG Product details

Features
 AEC-Q101 qualified
 Among the lowest RDS(on) on the market
 Excellent FoM (figure of merit)
 Low Crss/Ciss ratio for EMI immunity
 High avalanche ruggedness
 Wettable flank package

Applications
 Switching applications

Description
This N-channel Power MOSFET utilizes
STripFET™ F7 technology with an enhanced
trench gate structure that results in very low onstate
resistance, while also reducing internal
capacitance and gate charge for faster and more
efficient switching.




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About STMicroelectronics

STMicroelectronics is a multinational electronics and semiconductor manufacturer based in Geneva, Switzerland.

The company offers a wide range of products including microcontrollers, sensors, power amplifiers, and integrated circuits for various applications in the automotive, industrial, and consumer markets.

Founded in 1987, STMicroelectronics has operations in over 100 countries and is one of the largest semiconductor companies in the world.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.




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