Features
• Maximum junction temperature: TJ = 175 °C
• Tail-less switching off
• VCE(sat) = 1.85 V (typ.) @ IC = 60 A
• Tight parameter distribution
• Safe paralleling
• Low thermal resistance
• Very fast soft recovery antiparallel diode

Applications
• Photovoltaic inverters
• Uninterruptible power supply
• Welding
• Power factor correction
• Very high frequency converters

Description
These devices are IGBTs developed using an
advanced proprietary trench gate field-stop
structure. These devices are part of the V series
of IGBTs, which represents an optimum
compromise between conduction and switching
losses to maximize the efficiency of very high
frequency converters. Furthermore, a positive
VCE(sat) temperature coefficient and very tight
parameter distribution result in safer paralleling
operation.